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| 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DESCRIPTION: * * * N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti - Ni (1 um) - Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq. Switching Ultra Low Leakage Current UIS rated Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix FEATURES: * * * * * * * MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25 C Continuous Drain Current @ TC = 100 C Pulsed Drain Current @ T C = 25 C Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 20 1 .8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps mJ mJ C STATIC ELECTRICAL CHARACTERISTICS: SYMBO L BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37 C Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25 C Drain - Source On-State Resistance (VGS = 10V, ID = ID1, T J = 25 C) Drain - Source On-State Resistance (VGS = 7V, ID = 5...150 mA, T J= 37 C) Drain - Source On-State Resistance (VGS = 7V, ID = 5...150 mA, T J= 25 C) Drain - Source On-State Resistance (VGS = 7V, ID = 5...150 mA, T J= 60 C) Drain - Source On-State Resistance (VGS = 7V, ID = ID1, T J = 125 C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 25 C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 37 C) Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, T J = 125 C) Gate-Source Leakage Current (VGS = 20V, VCE =0V) Gate-Source Leakage Current (VGS= 20V VCE =0V), Tj= 37 C Gate-Source Leakage Current (VGS= 20V VCE =0V), Tj= 125 C 10 500 1 100 100 2 MIN 1000 3.4 3.5 12.5 12.5 11.5 15 23.5 10 4.5 13.5 TYP MAX UNIT Volts Volts Volts ohm ohm ohm ohm ohm uA uA uA nA nA nA MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications DYNAMIC CHARACTERISTICS: SYMBOL Ciss Coss Crss Qg Qgs Qgd CHARACTERISTIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CONDITIONS VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDS = 0.5BVDSS IC = 20 mA Resistive Switching (25 C) VGS = 10V, VDS = 0.5BVDSS ID = 20 mA Rg = 1.6 Resistive Switching (25 C) VGS = 10V, VDS = 0.5BVDSS ID = 100 mA Rg = 1.6 VGS =0 V, IS = 1 A IS = 1 A, d IS / dt = 100 A/us IS = 1 A, d IS / dt = 100 A/us MIN TYP 290 36 15 20 1 10 6.3 5.9 315 2.6 6.3 5.8 76 470 MAX 350 45 25 UNIT pF pF pF nC nC nC ns ns ns us ns ns ns ns td (on) tr td (off) tf td (on) tr td (off) tf VSD trr Qrr 1 130 .7 V ns uC Repetitive Rating: Pulse width limited by maximum junction temperature. - IC = I C2, VCC = 50V, RCE = 25 , L = 300 H, TJ = 25 C (R) TJ = 150 C See MIL-STD-750 Method 3471 DIE PROBE PARAMETERS (100% TESTS): SYMBOL BVDSS VGS(TH) RDS (ON) IDSS IGSS CHARACTERISTIC / TEST CONDITIONS Drain-Source Breakdown Voltage (VGS = 0V, IC = 0.25mA) Gate Threshold Voltage (VDS = VGS, IC = 1000 A, TJ = 25 C Drain-Source On-Resistance (VGS = 10V, IC = 1 A, T J = 25 C) Zero Gate Voltage Drain Current (VDS = 800 V, VGS = 0V, TJ = 25 C) Gate-Source Leakage Current (VGS = 20 V, VDS =0V) MIN 1000 2 TYP MAX 4.5 14 25 100 UNIT Volts ohm uA nA MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator Applications MECHANICAL CHARACTERISTICS V G S v s V D S v s ID 4.9 4.7 4.5 VGS(V) 4.3 4.1 3.9 3.7 3.5 0.01 ID = 1 0 0 m A ID = 5 0 m A ID = 1 0 m A ID = 1 m A 0.1 1 10 100 V D S (V ) MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25C unless otherwise specified |
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